We demonstrate the direct writing of GaAs waveguide structures by selective area deposition using laser‐assisted chemical vapor deposition (LCVD). The multimode waveguides have a Gaussian shape and a very smooth surface, and they exhibit losses as low as 5.4 dB/cm. The LCVD technique offers the capability of selective growth of independent device structures, and hence the capability of monolithic integration of these devices for optoelectronic applications. ©1996 American Institute of Physics.