Anomalous electrical behavior related to the formation of TeAsV−Gadefect complexes in laser mixed Au/Te/Au/GaAs structures
作者:
K. Wuyts,
J. Watte´,
R. E. Silverans,
M. Van Hove,
M. Van Rossum,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 14
页码: 1779-1781
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.106198
出版商: AIP
数据来源: AIP
摘要:
The ohmic contact formation mechanism in pulsed laser beam mixed Au/Te/Au/GaAs structures has been investigated by129I Mo¨ssbauer spectroscopy. Low‐resistance, ohmic contact structures, on bothn‐ andp‐type GaAs, were found to be correlated to the formation of a high density of defect complexes consisting of tellurium atoms quasi‐substitutional on arsenic sites with a gallium vacancy in the first neighbor shell. Correspondingly, the ohmic conduction is suggested to occur according to the amorphous heterojunction model, i.e., by a multi‐step recombination‐tunneling process.
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