Band‐gap narrowing in ordered and disordered semiconductor alloys
作者:
S.‐H. Wei,
Alex Zunger,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 7
页码: 662-664
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103307
出版商: AIP
数据来源: AIP
摘要:
Either spontaneous or artificial ordering of semiconductor alloys into CuAu‐like, chalcopyrite, or CuPt‐like structures is predicted to be accompanied by a reduction in the direct band gaps relative to the average over the binaries. In this letter calculated results are presented for seven III‐V and II‐VI alloys. We identify the mechanism for this band‐gap narrowing as band folding followed by repulsion between the folded states. The latter is coupled by the non‐zinc‐blende component of the superlattice potential. The same physical mechanism (but to a different extent) is responsible for gap bowing indisorderedalloys.
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