首页   按字顺浏览 期刊浏览 卷期浏览 AlGaAs/GaAs heterojunction bipolar transistor with a planar‐doped two‐dimensional hole ...
AlGaAs/GaAs heterojunction bipolar transistor with a planar‐doped two‐dimensional hole gas base grown by molecular‐beam epitaxy

 

作者: R. J. Malik,   L. M. Lunardi,   J. F. Walker,   R. W. Ryan,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 2  

页码: 682-684

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584390

 

出版商: American Vacuum Society

 

关键词: HETEROJUNCTIONS;BIPOLAR TRANSISTORS;MOLECULAR BEAM EPITAXY;GALLIUM ARSENIDES;ALUMINIUM ARSENIDES;FABRICATION;CRYSTAL DOPING;GAIN;PERFORMANCE;CHARGED−PARTICLE TRANSPORT;(Al,Ga)As;GaAs

 

数据来源: AIP

 

摘要:

A new type of AlGaAs/GaAs heterojunction bipolar transistor which employs a two‐dimensional‐hole gas base formed by planar doping using molecular‐beam epitaxy has been demonstrated. The base consists of a submonolayer of Be atoms of sheet concentration 0.5–5×1013cm−2which is deposited during growth interruption by molecular‐beam epitaxy. Transistor structures exhibit dc current gains up to 700. The effective base transit time is negligible in these transistors and it is postulated that very high speed nonequilibrium transport may occur in the collector region.

 

点击下载:  PDF (304KB)



返 回