Nonalloyed Ohmic contacts ton‐InP have been made by sputter deposition of metals onto sputter‐etched InP surfaces. Contacts were Ohmic as deposited without intentional heating. For a 500 Å sputter‐etch depth, the contact to 8×1018cm−3n‐InP was Ohmic up to 5×104A cm−2with a specific contact resistance of 4×10−7Ω cm2independent of sputter etch energy over the range 200 to 870 eV. To 6×1017cm−3n‐InP, the corresponding value was 1.8×10−6Ω cm2. The In rich, degeneraten‐type sputter etch damaged surface is responsible for the quality of the contact, which is independent of the particular contacting metal, thus permitting the use of a barrier metal/noble metal combination. Nonalloyed contacts fabricated with Ti/Pt have low stress and excellent adhesion to InP. Even for the lowest etch energy, they are thermally stable, with no change caused by short periods up to 430 °C, or extended periods (∼100 h) at 250 °C. This contacting procedure and the resultant contact has many advantages over the usual Au:Sn or Au:Ge alloyed contact.