It is well known that carrier depth profiles obtained by the capacitance‐voltage (C‐V) measurement method provide carrier information only beyond the initial semiconductor depletion region. A novel new method has been developed within the depletion approximation for obtaining carrier depth profiles inside the initial depletion region of a semiconductor through the combined use of the layer‐removal technique andC‐Vprofile measurements. This method has been successfully demonstrated through simulatedC‐Vprofile data created from a known Gaussian distribution of Si‐implanted GaAs.