Diamond chemical vapor deposition from a capacitively coupled radio frequency plasma
作者:
Richard B. Jackman,
Judith Beckman,
John S. Foord,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 8
页码: 1018-1020
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113591
出版商: AIP
数据来源: AIP
摘要:
Capacitively coupled radio frequency (cc‐rf) plasmas offer advantages over microwave (MW) induced plasmas for the growth of large area homogeneous thin films. However, conventionally designed cc‐rf sources lead, at best, to extremely poor quality material when diamond growth is attempted. The first complete diamond overlayer to be grown with cc‐rf is reported here, where a novel magnetically enhanced source with ring electrodes has been used. ©1995 American Institute of Physics.
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