Bulk diffusion length improvement by rapid thermal gettering
作者:
B. Hartiti,
A. Slaoui,
M. Loghmarti,
J. C. Muller,
P. Siffert,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 26
页码: 3446-3448
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.105673
出版商: AIP
数据来源: AIP
摘要:
Rapid thermal diffusion of phosphorus intop‐type silicon from a spin‐coated film containing the dopant has been studied as a function of process temperature and time duration. The electron diffusion length measurements performed by the surface photovoltage method present evidence for a gettering phenomena since the diffusion length values of the diffused silicon samples are found to exceed the initial value reported for the virgin material.
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