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Investigation of porous silicon by scanning tunneling microscopy and atomic force microscopy

 

作者: Tao Yu,   R. Laiho,   L. Heikkilä,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 4  

页码: 2437-2439

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587778

 

出版商: American Vacuum Society

 

关键词: POROSITY;SILICON;SURFACE STRUCTURE;ELECTRONIC STRUCTURE;SURFACE STATES;STM;ATOMIC FORCE MICROSCOPY;Si

 

数据来源: AIP

 

摘要:

The size and distribution of surface features of porous silicon layers have been investigated by scanning tunneling and atomic force microscopy. Pores and hillocks down to 1–2 nm size were observed, with their shape and distribution on the sample surface being influenced by crystallographic effects. The local density of electronic states show a strong increase above 2 eV, in agreement with recent theoretical predictions.

 

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