Point defects produced by neutron, electron or γ-ray irradiation were studied by electrical measurements. The defect levels were analyzed by DLTS technique. Annealing of radiation induced defects at about 260°C was obtained in 20 min isochronal annealings. Annealed fraction of the 260°C stage was obtained to be 85% in arsenic-doped crystals and independent of the species of irradiating particle. The value in antimony-doped and oxygen-doped specimens were 25 and 70%, respectively. The activation energy was found to be 1.6 eV and the annealing kinetics were first order. A tentative model for the defect responsible at the 260°C stage is a vacancy complex.