Charge carrier dynamics in doped and undoped hydrogenated amorphous silicon (a‐Si:H) films is studied by contactless time‐resolved photoconductivity measurements. Subband‐gap and above band‐gap excitation are used to generate excess mobile charge carriers. In undopeda‐Si:H the electron decay at charge carrier concentrations larger than 1016cm−3is mainly due to an electron‐hole recombination which is controlled by hole dispersion.ndoping introduces hole traps which increase the effective electron lifetime drastically as they quench this electron‐hole recombination channel. At highn‐doping levels the electron decay becomes faster due to an increase of the concentration of recombination centers upon doping. In lightly dopedp‐type samples the transient photoconductivity reflects the interaction of mobile holes with states in the valence‐band tail. In heavily dopedp‐ andn‐type films the majority carriers decay by a second‐order recombination process with trapped minority charge carriers. The transport parameters deduced agree with time‐of‐flight data.