Thin, highly doped layers of epitaxial silicon deposited by limited reaction processing
作者:
C. M. Gronet,
J. C. Sturm,
K. E. Williams,
J. F. Gibbons,
S. D. Wilson,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 48,
issue 15
页码: 1012-1014
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.96620
出版商: AIP
数据来源: AIP
摘要:
Limited reaction processing was used to deposit ultrathin, highly doped layers of epitaxial silicon. Multilayer structures consisting of alternating undoped and heavily boron‐doped regions were fabricatedinsitu. The interlayer doping profiles of these structures, as determined by secondary ion mass spectroscopy, are abrupt. Van der Pauw measurements indicate that the electrical characteristics of thep+epitaxial films are comparable to bulk material.
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