Summary Abstract: Influence of substrate misorientation on defect and impurity incorporation in AlGaAs/GaAs heterojunctions grown by molecular‐beam epitaxy

 

作者: D. C. Radulescu,   G. W. Wicks,   W. J. Schaff,   A. R. Calawa,   L. F. Eastman,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 2  

页码: 615-616

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584413

 

出版商: American Vacuum Society

 

关键词: (Al,Ga)As;GaAs

 

数据来源: AIP

 

 

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