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Preparation of TiN films by photochemical vapor deposition

 

作者: Seiji Motojima,   Hidetoshi Mizutani,  

 

期刊: Applied Physics Letters  （AIP Available online 1989）
卷期: Volume 54, issue 12  

页码: 1104-1105

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.100771

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The TiN films have been prepared by photochemical vapor deposition using a D2lamp from a gas mixture of TiCl4‐NH3(or N2) ‐H2. The deposition temperature of the TiN films was lowered by 50–100 °C by irradiation with a D2lamp as compared to that without irradiation. The deposition rate was increased by 35–300% with irradiation.

 

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