Defects in electron irradiatedn‐type GaP
作者:
M. A. Zaidi,
M. Zazoui,
J. C. Bourgoin,
期刊:
Journal of Applied Physics
(AIP Available online 1993)
卷期:
Volume 74,
issue 8
页码: 4948-4952
ISSN:0021-8979
年代: 1993
DOI:10.1063/1.354332
出版商: AIP
数据来源: AIP
摘要:
The characteristic ionization energies, barriers associated with capture, energy levels, and introduction rates of the various electron and hole traps introduced by electron irradiation inn‐type GaP are determined using deep level transient spectroscopy. The same traps are created after 4 or 300 K irradiation. Their introduction rates correspond to those expected for primary displacements. From the similarity to the case of GaAs, we conclude that the corresponding defects are intrinsic defects (isolated vacancies and vacancy interstitial pairs) associated with the P (electron traps) and Ga (hole traps) sublattices.
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