A simple technique for eliminating hillocks in integrated circuit metallization is reported. In this technique, the aluminium film, after deposition on an oxidized silicon wafer and sintering, is stripped off in orthophosphoric acid. The wafer is thoroughly cleaned in DI water and no HF is used. This treatment forms an A12O3+Si dipole layer on the oxide surface and makes it aluminiumphilic. Further aluminization and sintering generate the adherant composite layers of Al,Al2O3+Si on oxide surface and thereby eliminate hillocks.