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Positron mobility in thermally grown SiO2measured by Doppler broadening technique

 

作者: Y. Kong,   T. C. Leung,   P. Asoka‐Kumar,   B. Nielsen,   K. G. Lynn,  

 

期刊: Journal of Applied Physics  （AIP Available online 1991）
卷期: Volume 70, issue 5  

页码: 2874-2876

 

ISSN:0021-8979

 

年代: 1991

 

DOI:10.1063/1.349353

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The positron mobility in thermally grown SiO2is deduced from Doppler broadening lineshape data on a metal‐oxide‐semiconductor sample for positrons implanted into the oxide layer. The fitted mobility is ∼13(10)×10−3cm2/s V. This value is between that of the electron and hole mobilities in the same system and is two orders of magnitude smaller than the previous estimate from positron measurements.

 

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