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Ultraviolet‐Enhanced Oxidation of Silicon

 

作者: Ruben Oren,   Sorab K. Ghandhi,  

 

期刊: Journal of Applied Physics  （AIP Available online 1971）
卷期: Volume 42, issue 2  

页码: 752-756

 

ISSN:0021-8979

 

年代: 1971

 

DOI:10.1063/1.1660091

 

出版商: AIP

 

数据来源: AIP

 

摘要:

This paper describes the results of dry thermal oxidation of silicon under uv‐irradiation conditions. A model is proposed to explain the enhanced oxidation and reduced surface‐state charge density that occur under these conditions.

 

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