Halogen vapor deposition of chalcogenide crystals: Lead sulfide
作者:
S. H. Kwan,
C. G. Fonstad,
A. Colozzi,
A. Linz,
期刊:
Journal of Applied Physics
(AIP Available online 1974)
卷期:
Volume 45,
issue 8
页码: 3273-3276
ISSN:0021-8979
年代: 1974
DOI:10.1063/1.1663772
出版商: AIP
数据来源: AIP
摘要:
n‐type single crystals of lead sulfide, PbS, have been grown by a novel chemical vapor deposition method of potential importance for growing a variety of chalcogenide crystals. A reduced‐pressure flowing system was developed based on the following chemical reactions: Pb+Cl2→PbCl2and PbCl2+H2S→PbS+2HCl. Additional Cl2is used for fine control of the growth rate. The optimal growth conditions are a temperature of 650 to 750°C and a pressure of 8 Torr. Important to the furnace design is a quartz concentric gas injection arrangement which prevents premature mixing and reacting of the gases.n‐type single crystals of PbS having carrier concentrations of the order of 1019cm−3and Hall mobilities of 600 cm2/V sec at 300°K and as high as 14 000 cm2/V sec at 77°K have been grown. An isothermal anneal at 850°C for 15 days will convert the crystals toptype. Possible extensions of the technique to mixed lead‐tin salts, including tellurides and selenides, and to other chalcogenides are discussed.
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