A series of gettering experiments have been carried out for a better understanding of gettering mechanism of Au atoms in silicon. Neutron activation techniques were used to study the efficiency of ion-implantation gettering of gold in gold-equilibrated silicon samples. The implantation species was 100 keV neon ions bombarded up to dose 5.1015, 1016and 5.1016ions/cm2. Next, annealing process at temperature 600°C, 800°C and 1000°C, respectively was performed. The experimental results of efficiency of gettering Gexpwere compared to the theoretical values Gthe. In this paper we propose the gettering model based on the dissociative mechanism of diffusion. We suggest, that for the temperatures up to 800°C, predominant gettering of Au atoms is governed by this mechanism.