Efficient red GaP LED's have been fabricated by compensating thepside of the junction with a donor. The observed efficiency in the diodes fabricated remains invariant over a wide range of net acceptor concentration. Utilizing the recombination kinetic analysis of Jayson, Bhargava, and Dixon, it is shown that better injection efficiencies and higher Zn&sngbnd;O complex concentrations are the cause for this invariance. The compensation technique potentially offers a commercial LPE growth process from which high‐efficiency low‐cost LED's could be fabricated.