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Electrical properties ofn-nZnSe/In0.04Ga0.96As(001)heterojunctions

 

作者: C. Cai,   M. I. Nathan,   S. Rubini,   L. Sorba,   B. Mueller,   E. Pelucchi,   A. Franciosi,  

 

期刊: Applied Physics Letters  （AIP Available online 1998）
卷期: Volume 73, issue 14  

页码: 2033-2035

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.122560

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Lattice-matchedn-nZnSe/In0.04Ga0.96Asheterojunctions were studied by means of current densityversusvoltage (J–V) and capacitanceversusvoltage (C–V) measurements. The resulting characteristics indicate that the behavior of thisn-nheterostructure can be explained by a back-to-back double Schottky diode model. The value of conduction band discontinuity(&Dgr;Ec)is found to be 0.10–0.12 eV. ©1998 American Institute of Physics.

 

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