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Growth of ZnSe/MgS strained‐layer superlattices by molecular beam epitaxy

 

作者: N. Teraguchi,   H. Mouri,   Y. Tomomura,   A. Suzuki,   H. Taniguchi,   J. Rorison,   G. Duggan,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 67, issue 20  

页码: 2945-2947

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.114820

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Growth of ZnSe/MgS strained‐layer superlattices (SLSs) has been carried out by molecular beam epitaxy. The crystal quality of SLSs degraded with MgS thickness of more than about 3 monolayers. Photoluminescence due to the transition between quantized levels was observed. Photoluminescence peak energies higher than 3.0 eV at 77 K were observed, which are comparable to that of ZnMgSSe quaternary material. ©1995 American Institute of Physics.

 

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