A high-capacitance PZT-on-Ta2O5 memory cell with a chemically stable electrode suitable for sub-micron processing
作者:
M. Azuma,
T. Nasu,
S. Katsu,
T. Otsuki,
G. Kano,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1992)
卷期:
Volume 2,
issue 1-4
页码: 387-397
ISSN:1058-4587
年代: 1992
DOI:10.1080/10584589208215758
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
A high-capacitance Pb (Zrx, Ti1-x)O3 (PZT)-on-Ta2O5 memory cell suitable for sub-micron processing is proposed, and an experimental capacitor of PZT (Zr/Ti= 52/48)-on-Ta2O5 with Ta electrode was prepared. The X-ray diffraction and XMA analysis of the sample showed that PZT reacted with neither Ta nor Ta2O5. The capacitor with 500 nm PZT thickness shows current density of 10-8 A/cm2 at 4MV/cm, the breakdown field of 8MV/cm, and the effective dielectric constant of 40.
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