Variation of surface morphology with substrate temperature for molecular beam epitaxially grown GaSb(100) on GaAs(100)
作者:
S. J. Brown,
M. P. Grimshaw,
D. A. Ritchie,
G. A. C. Jones,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 10
页码: 1468-1470
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.116910
出版商: AIP
数据来源: AIP
摘要:
Using molecular beam epitaxy (MBE) several layers of GaSb were grown on GaAs at substrate temperatures of 400, 475, and 550 °C, and the surface morphology was studied with aninsituultra high vacuum scanning tunneling microscope (STM). We have observed spiral mound growth of different morphology originating from surface dislocations for the samples grown at 400 and 475 °C, however at 550 °C there is no spiral mound growth and neighboring dislocations are joined by a single step. The surfaces have different rms surface roughness and dislocation density which has important consequences with regard to heterointerface quality. ©1996 American Institute of Physics.
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