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Epitaxial Deposition of Platinum on Iridium at Low Temperatures

 

作者: W. R. Graham,   F. Hutchinson,   J. J. Nadakavukaren,   D. A. Reed,   S. W. Schwenterly,  

 

期刊: Journal of Applied Physics  (AIP Available online 1969)
卷期: Volume 40, issue 10  

页码: 3931-3936

 

ISSN:0021-8979

 

年代: 1969

 

DOI:10.1063/1.1657119

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Platinum evaporated on a clean iridium surface at temperatures as low as 200°K produces epitaxial layers, as shown by field ion microscopy. If the iridium surface has been exposed to the atmosphere after forming, the temperature required for epitaxy rises to about 375°K (100°C). Even this temperature is well below that required for high mobility of the incoming atoms over the surface, as assumed in present theories of the formation of epitaxial layers.

 

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