Epitaxial Deposition of Platinum on Iridium at Low Temperatures
作者:
W. R. Graham,
F. Hutchinson,
J. J. Nadakavukaren,
D. A. Reed,
S. W. Schwenterly,
期刊:
Journal of Applied Physics
(AIP Available online 1969)
卷期:
Volume 40,
issue 10
页码: 3931-3936
ISSN:0021-8979
年代: 1969
DOI:10.1063/1.1657119
出版商: AIP
数据来源: AIP
摘要:
Platinum evaporated on a clean iridium surface at temperatures as low as 200°K produces epitaxial layers, as shown by field ion microscopy. If the iridium surface has been exposed to the atmosphere after forming, the temperature required for epitaxy rises to about 375°K (100°C). Even this temperature is well below that required for high mobility of the incoming atoms over the surface, as assumed in present theories of the formation of epitaxial layers.
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