Er‐doped GaP layers were deposited on Si (111) substrates using atmospheric pressure metalorganic vapor phase epitaxy. A strong characteristic Er3+intra‐4f‐shell emission at 0.80 eV (1.54 &mgr;m) is observed over the temperature range of 12–300 K. The integrated intensity of the 0.80 eV emission is only weakly temperature dependent, decreasing less than 50% as temperature increases from 12 to 300 K. These results indicate that Er‐doped GaP thin films deposited on Si are suitable as a material for integrated optoelectronic applications. ©1995 American Institute of Physics.