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Ferroelectric field effect in ultrathinSrRuO3films

 

作者: C. H. Ahn,   R. H. Hammond,   T. H. Geballe,   M. R. Beasley,   J.-M. Triscone,   M. Decroux,   O&slash;. Fischer,   L. Antognazza,   K. Char,  

 

期刊: Applied Physics Letters  (AIP Available online 1997)
卷期: Volume 70, issue 2  

页码: 206-208

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.118203

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report the observation of a ferroelectric field effect in the conducting oxide SrRuO3using Pb(Zr0.52Ti0.48)O3/SrRuO3epitaxial heterostructures. Upon reversing the polarization of the ferroelectric Pb(Zr0.52Ti0.48)O3layer, we measured a 9&percent; change in the resistance of a nominally 30 Å SrRuO3film at room temperature. This change was nonvolatile for a period of several days. Conductivity measurements taken between 4.2 and 300 K are consistent withn-type conduction throughout this temperature range. Hall effect measurements also yieldn-type conduction, withn≈2×1022electrons/cm3, and furthermore allow us to understand quantitatively the magnitude of the observed resistivity change. ©1997 American Institute of Physics.

 

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