Ferroelectric field effect in ultrathinSrRuO3films
作者:
C. H. Ahn,
R. H. Hammond,
T. H. Geballe,
M. R. Beasley,
J.-M. Triscone,
M. Decroux,
O&slash;. Fischer,
L. Antognazza,
K. Char,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 2
页码: 206-208
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118203
出版商: AIP
数据来源: AIP
摘要:
We report the observation of a ferroelectric field effect in the conducting oxide SrRuO3using Pb(Zr0.52Ti0.48)O3/SrRuO3epitaxial heterostructures. Upon reversing the polarization of the ferroelectric Pb(Zr0.52Ti0.48)O3layer, we measured a 9&percent; change in the resistance of a nominally 30 Å SrRuO3film at room temperature. This change was nonvolatile for a period of several days. Conductivity measurements taken between 4.2 and 300 K are consistent withn-type conduction throughout this temperature range. Hall effect measurements also yieldn-type conduction, withn≈2×1022electrons/cm3, and furthermore allow us to understand quantitatively the magnitude of the observed resistivity change. ©1997 American Institute of Physics.
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