Correlations for damage in diffused-junction InP solar cells induced by electron and proton irradiation
作者:
Masafumi Yamaguchi,
Tatsuya Takamoto,
Stephen J. Taylor,
Robert J. Walters,
Geoffrey P. Summers,
Dennis J. Flood,
Masamichi Ohmori,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 9
页码: 6013-6018
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.364449
出版商: AIP
数据来源: AIP
摘要:
The damage to diffused-junctionn+-pInP solar cells induced by electron and proton irradiations over a wide range of energy from 0.5 to 3 MeV and 0.015 to 20 MeV, respectively, has been examined. The experimental electron and proton damage coefficients have been analyzed in terms of displacement damage dose, which is the product of the particle fluence and the calculated nonionizing energy loss [G. P. Summers, E. A. Burke, R. Shapiro, S. R. Messenger, and R. J. Walters, IEEE Trans. Nucl. Sci.40, 1300 (1993).] Degradation of InP cells due to irradiation with electrons and protons with energies of more than 0.5 MeV show a single curve as a function of displacement damage dose. Based on the deep-level transient spectroscopy analysis, damage equivalence between electron and proton irradiation is discussed. InP solar cells are confirmed to be substantially more radiation resistant than Si and GaAs-on-Ge cells. ©1997 American Institute of Physics.
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