cw laser annealing of hydrogenated amorphous silicon obtained by rf sputtering
作者:
J.P. Thomas,
M. Fallavier,
K. Affolter,
W. Lu¨thy,
M. Dupuy,
期刊:
Journal of Applied Physics
(AIP Available online 1981)
卷期:
Volume 52,
issue 1
页码: 476-479
ISSN:0021-8979
年代: 1981
DOI:10.1063/1.329811
出版商: AIP
数据来源: AIP
摘要:
Hydrogenated amorphous silicon obtained by rf sputtering has been annealed using cw lasers (Ar or Kr ion). The annealed films have been microanalyzed for quantitative profiling of hydrogen and argon. TEM analysis was used for structure determination. The release of hydrogen and argon as well as the grain size of the polycrystalline material obtained are related to the deposited laser energy. Comparison with other production methods of such material from the amorphous state is discussed.
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