Sputtered silicon as a new etching mask for GaAs devices
作者:
X. S. Wu,
E. Omura,
T. C. Huang,
L. A. Coldren,
J. L. Merz,
期刊:
Journal of Applied Physics
(AIP Available online 1986)
卷期:
Volume 60,
issue 3
页码: 1218-1220
ISSN:0021-8979
年代: 1986
DOI:10.1063/1.337370
出版商: AIP
数据来源: AIP
摘要:
The use of a sputtered silicon film as a new type of etching mask is reported for the first time. Its desirable properties arise because of similar material characteristics (thermal expansion coefficient, crystal structure, smaller misfit factors) and different etching behavior as compared to gallium arsenide. These properties are studied and utilized in the fabrication of GaAs/GaAlAs double heterostructure (DH) ridge waveguide devices.
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