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Self‐aligned GaAs/GaAIAs semiconductor laser with lateral spatial variation in thickness grown by metalorganic‐chemical vapor deposition

 

作者: D. Fekete,   R. D. Burnham,   D. R. Scifres,   W. Streifer,   R. D. Yingling,  

 

期刊: Applied Physics Letters  （AIP Available online 1981）
卷期: Volume 38, issue 8  

页码: 607-609

 

ISSN:0003-6951

 

年代: 1981

 

DOI:10.1063/1.92450

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A self‐aligned masking technique for growing diode lasers with lateral spatial variations in the active and/or cladding regions by metalorganic‐chemical vapor deposition is described. These lasers inherently have both lateral current confinement and lateral real refractive index waveguidance. Threshold currents of 40 mA and differential quantum efficiencies of 30% are measured reproducibly over a wafer.

 

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