Spectrally resolved light intensity images of self‐assembled InAs/Al0.6Ga0.4As quantum dots (QDs) were measured by injecting electrons from the tip of a scanning tunneling microscope at room temperature. Localized bright features were observed in the images for different photon energies. The light emission spectra measured over the bright features showed a single emission peak having different peak energies with linewidths of 30–45 meV. By comparing these results with atomic‐force‐microscope images and photoluminescence spectra, we identified the observed bright features with the ground‐state interband transition of individual InAs QDs. © 2003 American Institute of Physics