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New microfabrication technique on a submicrometer scale by synchrotron radiation‐excited etching

 

作者: Shingo Terakado,   Takashi Goto,   Masayoshi Ogura,   Kazuhiro Kaneda,   Osamu Kitamura,   Shigeo Suzuki,   Masao Nakao,   Kenichiro Tanaka,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1995）
卷期: Volume 13, issue 6  

页码: 2175-2178

 

ISSN:1071-1023

 

年代: 1995

 

DOI:10.1116/1.588099

 

出版商: American Vacuum Society

 

关键词: ETCHING;SILICON;SILICON CARBIDES;SPATIAL DISTRIBUTION;SYNCHROTRON RADIATION;TUNGSTEN OXIDES;Si;SiC;WO3

 

数据来源: AIP

 

摘要:

Synchrotron radiation‐excited etching of Si, SiC, and WO3has been investigated using a noncontact mask with a pattern of submicrometer scale. The blank pattern of the mask was replicated on the etched surface, and highly area‐selective etching was realized at the size of ∼0.4 μm. The spatial distribution of synchrotron radiation intensity on the sample determined the depth profile of the etched region of the sample. Some adsorbate which might be redeposited etching products appeared in the vicinity of the blank pattern of the mask.

 

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