Full chemical fabrication of SrBi2(Ta,Nb)2O9ferroelectric thin film capacitors
作者:
J.H. Yi,
P. Thomas,
M. Manier,
J.P. Mercurio,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1999)
卷期:
Volume 23,
issue 1-4
页码: 77-88
ISSN:1058-4587
年代: 1999
DOI:10.1080/10584589908210141
出版商: Taylor & Francis Group
关键词: Sol-gel spin-coating;RuO2;SrBi2(Nb, Ta)2O2;ferroelectrics;thin films
数据来源: Taylor
摘要:
SrBi2(Ta,Nb)2O9ferroelectric thin film capacitors with RuO2electrodes were prepared for the first time by a full chemical route. Stable sols of SrBi2(Ta,Nb)2O9precursors were obtained from mixtures of niobium (tantalum) ethoxide, bismuth and strontium 2-ethylhexanoates. Ruthenium dioxide precursors was prepared by dissolving an aqueous solution of ruthenium nitrosylnitrate into 2-methoxyethanol. Capacitors were fabricated by sequential spin coating the precursors on silicon wafers according to the sequence Si/RuO2/SrBi2(Ta,Nb)2O9/RuO2. Fully crystallized crack-free materials were obtained by annealing at 700°C for 2 h. Hysteresis loops (3–10 V) are similar to those observed using platinum electrodes.
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