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Barrier‐controlled low‐thresholdpnpnGaAs heterostructure laser

 

作者: C. P. Lee,   A. Gover,   S. Margalit,   I. Samid,   A. Yariv,  

 

期刊: Applied Physics Letters  （AIP Available online 1977）
卷期: Volume 30, issue 10  

页码: 535-538

 

ISSN:0003-6951

 

年代: 1977

 

DOI:10.1063/1.89225

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Incorporation of GaAlAs potential barrier layers into the active regions of a heterostructurepnpninjection laser makes it possible to design Shockley diode lasers with low (3 kA/cm2) room‐temperature threshold currents.

 

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