Significant improvements in the efficiencies of dendritic web and edge‐supported‐pulling silicon sheet solar cells have been obtained after hydrogen ion beam passivation for a period of ten minutes or less. We have studied the effects of the hydrogen ion beam treatment with respect to silicon material damage, silicon sputter rate, introduction of impurities, and changes in reflectance. The silicon sputter rate for constant ion beam flux of 0.60±0.05 mA/cm2exhibits a maximum at approximately 1400‐eV ion beam energy.