Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces
作者:
Hideki Hirayama,
Satoru Tanaka,
Peter Ramvall,
Yoshinobu Aoyagi,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 14
页码: 1736-1738
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121168
出版商: AIP
数据来源: AIP
摘要:
We demonstrate photoluminescence (PL) from self-assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metalorganic chemical vapor deposition. InGaN QDs are successfully fabricated by the growth mode transition to three-dimensional nanoscale island formation by using “antisurfactant” silicon on AlGaN surface. The diameter and height of the fabricated InGaN QDs are estimated to be∼10 nmand∼5 nm,respectively, by an atomic-force microscope (AFM). Indium mole fraction ofInxGa1−xNQDs is controlled fromx=∼0.22to∼0.52by varying the growth temperature of QDs. Intense photoluminescence is observed even at room temperature from InGaN QDs embedded with the GaN capping layers. In addition, from the temperature dependence of the PL-peak energy, we convincingly show that the PL emission actually comes from the InGaN QDs. ©1998 American Institute of Physics.
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