Nd-dopedLiNbO3films have been prepared on (012) sapphire substrates by pulsed laser deposition.LiNbO3phase is formed using Li rich targets, a1.5×10−2 mbaroxygen pressure atmosphere, and heating the substrate to 520 °C. The crystallinity of 1-&mgr;m-thick films has been enhanced by postdeposition thermal treatments at 600 °C. The [Nd]/[Nb] concentration ratio in the film is equal to its value in the target; however, a limit for the Nd incorporation to theLiNbO3phase has been found due to the preferential nucleation of Li deficient phases for[Nd]/[Nb]>0.1.The Nd photoluminescence of the films have been studied at 77 K exciting the4F3/2multiplet. The photoluminescence of congruentLiNbO3single crystals is well reproduced in films prepared from targets with a[Li]/[Nb]=1.6composition. Films prepared from targets with a[Li]/[Nb]=3composition, additionally show an emission, with a main maximum at 1064 nm, the splitting of the4F3/2multiplet being80 cm−1.The possible origin of the latter photoluminescence is discussed. ©1997 American Institute of Physics.