Alternating‐Current Method for Separating the Contact Influence from Bulk Properties of Semiconductors
作者:
H. P. Wagner,
K. H. Besocke,
期刊:
Journal of Applied Physics
(AIP Available online 1969)
卷期:
Volume 40,
issue 7
页码: 2916-2922
ISSN:0021-8979
年代: 1969
DOI:10.1063/1.1658101
出版商: AIP
数据来源: AIP
摘要:
An ac test method is described which allows separation of contact influences from the bulk resistance of semiconductors and the measurement of their properties simultaneously. As an example, this method is applied to thin CdS films with different metal electrodes. Examples are given for the light and voltage dependence of both bulk and contact resistance, the true rise and decay curves, and the separation of changes in contact and bulk resistance with time or by post deposition treatments.
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