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Displacement Thresholds in Semiconductors

 

作者: J. J. Loferski,   P. Rappaport,  

 

期刊: Journal of Applied Physics  （AIP Available online 1959）
卷期: Volume 30, issue 8  

页码: 1296-1299

 

ISSN:0021-8979

 

年代: 1959

 

DOI:10.1063/1.1735308

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The paper reviews the current status of displacement threshold determinations, both theoretical and experimental, in semiconductors. The work of Seitz, Kohn, Klontz, Loferski, and Rappaport, Vavilov,et al., and Brown and Augustyniak on germanium are discussed and compared. Measurements of thresholds in Si and InSb also are discussed briefly.

 

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