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Resistive and structural properties ofLa1.85Sr0.15Cu1−yZnyO4films

 

作者: Marta Z. Cieplak,   K. Karpin´ska,   J. Domagała,   E. Dynowska,   M. Berkowski,   A. Malinowski,   S. Guha,   M. Croft,   P. Lindenfeld,  

 

期刊: Applied Physics Letters  （AIP Available online 1998）
卷期: Volume 73, issue 19  

页码: 2823-2825

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.122602

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Single-phasec-axis alignedLa1.85Sr0.15Cu1−yZnyO4films were grown by pulsed laser deposition with Zn contents up to a value ofyof 0.12. The film properties indicate the existence of defects, in addition to the Zn impurities, that are unintentionally introduced during the film growth. These defects are probably oxygen vacancies, and have a distinctly different effect onTcfrom the Zn. The separation of the two effects resolves earlier ambiguities in the observed rates ofTcdepression. ©1998 American Institute of Physics.

 

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