Transient radiation study of GaAs metal semiconductor field effect transistors implanted in Cr‐doped and undoped substrates
作者:
M. Simons,
E. E. King,
W. T. Anderson,
H. M. Day,
期刊:
Journal of Applied Physics
(AIP Available online 1981)
卷期:
Volume 52,
issue 11
页码: 6630-6636
ISSN:0021-8979
年代: 1981
DOI:10.1063/1.328431
出版商: AIP
数据来源: AIP
摘要:
Flash x‐ray measurements have been made on GaAs metal semiconductor field effect transistor structures fabricated in both Cr‐doped and undoped semi‐insulating substrate material in order to characterize the levels responsible for long term transients in these devices. Prominent electron and hole traps with activation energies in the 0.76–0.90‐eV range have been identified. The main electron trap, which is present in both Cr‐doped and undoped substrates, appears to be primarily responsible for the observed transient response. However, traps related to Cr‐doping also contribute to the transient behavior.
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