首页   按字顺浏览 期刊浏览 卷期浏览 Compensation effects in C60doped by ion implantation
Compensation effects in C60doped by ion implantation

 

作者: P. Trouillas,   B. Ratier,   A. Moliton,  

 

期刊: Radiation Effects and Defects in Solids  (Taylor Available online 1995)
卷期: Volume 137, issue 1-4  

页码: 123-127

 

ISSN:1042-0150

 

年代: 1995

 

DOI:10.1080/10420159508222706

 

出版商: Taylor & Francis Group

 

关键词: C60;ion implantation;doping;degradation;thermopower

 

数据来源: Taylor

 

摘要:

We have studied electrical transport phenomena after ion implantation in sublimed C60films. A n type doping exists with 30 KeV potassium ion irradiations and low fluences (D < 1015ions/cm2). However degradation effects have been noted. So we have tried to discriminate doping and damage effects. Studies about the compensation phenomenum have been performed in order to prove the chemical role of the potassium atoms. An electron transfer from the alkali metal is sure; but a strong competition exists between degradation and doping phenomena. Finally, the intact C60molecules are the insulator barriers, K3C60and isolated carbon atoms are the conductor phase for an heterogeneous media model.

 

点击下载:  PDF (271KB)



返 回