A numerical technique has been used to solve the carrier transport equations for several (Hg,Cd)Te photodiode configurations, namelyn+pp+,n+np, andpin. Of particular interest are the fundamental recombination mechanisms of radiative and Auger. Results clearly demonstrate the importance of Auger type 1 and 7 mechanisms on thenandpsides of the junction, respectively, in limiting carrier lifetimes. For example, it was found that for defect‐free Hg1−xCdxTe alloys withx=0.2 and hole concentration less than 4×1014cm−3adjacent to the depletion region, the Auger recombination rate can be reduced below the radiative rate. An analysis of the spatial dependence of the electron mobility shows that the presence of high carrier concentrations and electric field strengths can reduce the mobility and consequently have an effect on the sensitivity and temporal response of the photodiode.