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Fabrication of sub‐100 nm GaAs columns by reactive ion etching using Au islands as etching mask

 

作者: J. Ahopelto,   V.‐M. Airaksinen,   E. Sirén,   H. E.‐M. Niemi,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1995）
卷期: Volume 13, issue 1  

页码: 161-162

 

ISSN:1071-1023

 

年代: 1995

 

DOI:10.1116/1.587976

 

出版商: American Vacuum Society

 

关键词: NANOSTRUCTURES;GALLIUM ARSENIDES;ALUMINIUM ARSENIDES;TERNARY COMPOUNDS;ETCHING;MASKING;ION BEAMS;FABRICATION;GOLD;GaAs;Au

 

数据来源: AIP

 

摘要:

A new method for fabrication of reactive ion etching masks for nanoscale GaAs columns is proposed. The mask consists of sub‐100 nm Au islands formed byinsituheating a thin gold film on the substrate surface. The resulting areal density of the Au islands can exceed 1010cm−2. The islands show good resistance against etching, making the method suitable for fabrication of nanoscale structures with very high aspect ratios. This is demonstrated by etching over 1 μm high GaAs and AlGaAs/GaAs columns with widths below 100 nm.

 

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