A simple wet chemical etch which produces stable and oxide-free surfaces of ZnSe is described. The etchant, a lowpHsolution ofH2SO4:H2O2:H2O,reacts with ZnSe producing an amorphous layer of Se which grows into the semiconductor. The Se layer is then dissolved in aqueous(NH4)2Sresulting in a S-passivated surface. The S-passivated layer is volatile and can be desorbed by heating the sample to 300 °C. The efficacy of this process is demonstrated by the formation of 20 nm wide quantum wires of CdZnSe/ZnSe with good optical properties. ©1997 American Institute of Physics.