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Solution synthesis of epitaxial films of bismuth containing ferroelectric materials

 

作者: DavidB. Beach,   JonathanS. Morrell,   ZilingB. Xue,   EliotD. Specht,  

 

期刊: Integrated Ferroelectrics  (Taylor Available online 2000)
卷期: Volume 28, issue 1-4  

页码: 29-36

 

ISSN:1058-4587

 

年代: 2000

 

DOI:10.1080/10584580008222218

 

出版商: Taylor & Francis Group

 

关键词: epitaxy;solution synthesis;bismuth layered compounds

 

数据来源: Taylor

 

摘要:

Methoxyethoxide complexes in 2-methoxyethanol were used to produce epitaxial thin films of SrBi2Nb2O9, SrBi2Ta2O9, BaBi2Nb2O9, and BaBi2Ta2O9on [100] oriented single-crystals of SrTiO3and LaAlO3. Films were prepared by spin coating substrates with alkoxide solutions and firing in air at 850 °C for 20 minutes. With the exception of BaBi2Ta2O9on LaAlO3, all of the films were the desiredc-axis oriented Aurivillius phase. Out-of-plane orientation was confirmed by -2 scans which showed only [002/] reflections, and in-plane orientation was determined by phi-scans about the [105] plane. Lattice constants and full-width at half-maximum (fwhm) values for both in-plane and out-of-plane reflections are reported.

 

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