Selective dry etching in a high density plasma for 0.5 μm complementary metal–oxide–semiconductor technology
作者:
J. Givens,
S. Geissler,
J. Lee,
O. Cain,
J. Marks,
P. Keswick,
C. Cunningham,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1994)
卷期:
Volume 12,
issue 1
页码: 427-432
ISSN:1071-1023
年代: 1994
DOI:10.1116/1.587139
出版商: American Vacuum Society
关键词: DENSE PLASMA;ETCHING;SURFACE REACTIONS;PLASMA JETS;MOS JUNCTIONS
数据来源: AIP
摘要:
0.5 μm complementary metal–oxide–semiconductor structures were utilized to investigate the selective nature of a high density plasma reactor. The formation of borderless contacts and local interconnects by the selective etch stop film approach was discussed and shown to be affected by topography, planarization, and nonuniformities. A factorial design of experiments determined the optimum conditions of the selective oxide etch chemistry. The resulting etch chemistry was characterized by measurable quantities such as an oxide etch rate of 1200 nm/min, a patterned (0.5 μm image) etch‐rate ratio for oxide:nitride ≳100:1 and 5%‐3σ uniformity. And, finally, an integratedinsituoxide etch/resist strip/nitride etch was presented.
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