Characterization of refractive index change induced by electron irradiation in amorphous thinAs2S3films
作者:
Nina Nordman,
Olli Nordman,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 4
页码: 1521-1524
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365952
出版商: AIP
数据来源: AIP
摘要:
Binary diffraction gratings inAs2S3films were prepared with the aid of an electron beam. The dose of the electrons was varied. The gratings were read with a HeNe laser, and the zero-order and first-order diffraction efficiencies were noted. Rigorous diffraction theory was used to give a homogeneous approximation for the refractive index change. Reactive ion etching was applied to reduce the thickness of the film, and a new value for the refractive index change was evaluated. The refractive index change versus film thickness dependence was found to be linear at low electron doses and Gaussian shaped at higher doses. Through a simple mathematical analysis, the absolute value of the refractive index was determined as a function of the position inside the film. At higher doses, the refractive index change was found to have a maximum value of 3&percent;, approximately 1.2 &mgr;m from the film surface. ©1997 American Institute of Physics.
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